M58MR032C datasheet(25/52 Pages) STMICROELECTRONICS

tên linh kiện	M58MR032C

Giải thích chi tiết về linh kiện	32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory

PDF	52 Pages

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M58MR032C, M58MR032D

Table 19. CFI Query System Interface Information

Offset

Data

Description

Value

1Bh

0017h

VDD Logic Supply Minimum Program/Erase or Write voltage

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 millivolts

1.7V

1Ch

0020h

VDD Logic Supply Maximum Program/Erase or Write voltage

bit 7 to 4

BCD value in volts

bit 3 to 0

BCD value in 100 millivolts

1Dh

0017h

VPP [Programming] Supply Minimum Program/Erase voltage

bit 7 to 4

HEX value in volts

bit 3 to 0

BCD value in 100 millivolts

1.7V

1Eh

00C0h

VPP [Programming] Supply Maximum Program/Erase voltage

bit 7 to 4

HEX value in volts

bit 3 to 0

BCD value in 100 millivolts

12V

1Fh

0004h

Typical timeout per single byte/word program = 2n µs

16µs

20h

0004h

Typical timeout for tetra word program = 2n µs

16µs

21h

000Ah

Typical timeout per individual block erase = 2n ms

22h

0000h

Typical timeout for full chip erase = 2n ms

23h

0004h

Maximum timeout for word program = 2n times typical

512µs

24h

0004h

Maximum timeout for tetra word = 2n times typical

512µs

25h

0004h

Maximum timeout per individual block erase = 2n times typical

16s

26h

0000h

Maximum timeout for chip erase = 2n times typical

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