isc N-Channel MOSFET Transistor

IRF200P222

www.iscsemi.com

2023-9-7

2

ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）

SYMBO

L

PARAMETER

CONDITIONS

MIN

Typ

MAX

UNIT

V(BR)DSS

Drain-Source Breakdown Voltage VGS= 0; ID= 1mA

200

--

--

V

VGS(th)

Gate Threshold Voltage

VDS= VGS; ID= 270uA

2.0

--

4.0

V

RDS(on)

Drain-Source On-Resistance

VGS= 10V; ID= 82A

--

--

6.6

mΩ

IGSS

Gate-Body Leakage Current

VGS= ±20V;VDS= 0V

--

--

±

100

nA

IDSS

Zero Gate Voltage Drain Current

VDS= 160V; VGS= 0V

--

--

1.0

uA

VSD

Forward On-Voltage

IS= 82A; VGS= 0V

--

--

1.2

V

Ciss

Input Capacitance

VGS=0V,VDS=40V,f=1MHz

--

21300

--

pF

Coss

Output Capacitance

--

1450

--

Crss

Reverse Transfer Capacitance

--

950

--

tdon

Turn-on Delay Time

VDD=100V,ID=55A,VGS=10V,

RG=4.7Ω

--

92

--

ns

tr

Rise Time

--

42

--

tdoff

Turn-Off Delay Time

--

175

--

tf

Fall Time

--

36

--

trr

Reverse Recovery Time

IF=55A,diF/dt=100A/us

--

370

--

ns

Qrr

Reverse Recovery Charge

--

938

--

nC

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notification. The information contained herein is presented only as a guide for the applications of our

products.

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