MSS40 datasheet(1/6 Pages) STMICROELECTRONICS

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MSS40

THYRISTOR MODULE

.

VDRM =VRRM UP TO 1400 V

.

IT(RMS) =55 A

.

HIGH SURGE CAPABILITY

.

INSULATED PACKAGE :

INSULATING VOLTAGE 2500 V(RMS)

April 1995

ISOTOPTM

(Plastic)

Screw version

ABSOLUTE RATINGS (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current

Tc = 80

°C55

A

ITSM

Non repetitive surge peak on-state current

( Tj initial = 25

°C)

tp = 8.3ms

420

A

tp = 10ms

400

I2tI2t value for fusing

tp = 10ms

800

A2s

dI/dt

Critical rate of rise of on-state current

Gate supply : IG = 400mA – diG/dt = 1A/µs

100

A/

µs

Tstg

Tj

Storage temperature range

Operating junction temperature range

- 40 + 150

- 40 + 125

°C

A2

G2

A1

G1

PIN CONNECTIONS

1 : Thyristor 2 Anode (A2)

2 : Thyristor 2 Gate (G2)

3 : Thyristor 1 Anode (A1)

4 : Thyristor 1 Gate (G1)

FEATURES

DESCRIPTION

The MSS40 family are constitued of two general

purpose SCR. Suitable for AC switching and

phase control on resistive and inductive load up

to 400 Hz.

The small volume (7cm

3) and weight (29g) of the

isotop package are well adapted to new genera-

tion of medium size module market applications.

Symbol

Parameter

MSS40

Unit

-800

-1200

-1400

VDRM

VRRM

Repetitive peak off-state voltage

Tj = 125

°C

800

1200

1400

V

TM : ISOT OP is a trademark of SGS-THOMSON Microelectronics

1/6

Số phần tương tự - MSS40

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