STPS61170CW datasheet(1/5 Pages) STMICROELECTRONICS

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Table 1: Main Product Characteristics

IF(AV)

2 x 30 A

VRRM

170 V

Tj

175 °C

VF(max)

0.67 V

STPS61170C

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

REV. 1

Table 3: Absolute Ratings (limiting values, per diode)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

170

V

IF(RMS) RMS forward current

80

A

IF(AV)

Average forward current

Tc = 150 °C

δ = 0.5

Per diode

Per device

30

60

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

500

A

PARM

Repetitive peak avalanche power

tp = 1 µs Tj = 25 °C

31800

W

Tstg

Storage temperature range

-65 to + 175

°C

Tj

Maximum operating junction temperature *

175

°C

dV/dt

Critical rate of rise of reverse voltage

10000

V/µs

* :

thermal runaway condition for a diode on its own heatsink

dPtot

dTj

---------------

1

Rth j

a

–

()

--------------------------

>

K

A1

A2

A1

K

A2

TO-247

September 2005

FEATURES AND BENEFITS

■ High junction temperature capability

■ Low leakage current

■ Good trade off between leakage current and

forward voltage drop

■ Low thermal resistance

■ High frequency operation

■ Avalanche specification

DESCRIPTION

Dual center tab Schottky rectifier suited for High

Frequency Switch Mode Power Supply.

Packaged in TO-247, this device is intended for

use to enhance the reliability of the application.

Table 2: Order Code

Part Number

Marking

STPS61170CW

Số phần tương tự - STPS61170CW

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STPS61170CW	207Kb / 9P	170 V power Schottky rectifier 27-Jul-2018

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