Note: Stresses greater than those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress

rating only and functional operation of the device at these or any other conditions above those indicated in the operational section of this

specification is not implied. Exposure to the absolute maximum ratings conditions for extended periods of time may affect reliability.

CAUTION: Negative undershoots below –0.3 volts are not allowed on any pin while in the Battery Back-up mode.

Symbol

Parameter

Value

Unit

Ambient Operating Temperature

0 to 70

°C

–40 to 70

°C

Temperature Under Bias

–10 to 70

°C

Lead Soldering Temperature for 10 seconds

260

°C

Input or Output Voltages

–0.3 to 7

V

Supply Voltage

–0.3 to 7

V

Table 2. Absolute Maximum Ratings

Figure 2. DIP Pin Connections

RAM directly replaces industry standard SRAMs. It

also fits into many EPROM and EEPROM sockets,

providing the nonvolatility of PROMs without any

requirement for special write timing or limitations

on the number of writes that can be performed.

The M48Z30/30Y has its own Power-fail Detect

Circuit. The control circuitry constantly monitors the

single 5V supply for an out of tolerance condition.

protects the SRAM, providing a high degree of data

security in the midst of unpredictable system op-

approximately3V, the control circuitry connectsthe

battery which sustains data until valid power re-

turns.

READ MODE

The M48Z30/30Y is in the Read Mode whenever

W (Write Enable) is high and E (Chip Enable) is low.

The device architecture allows ripple-through ac-

cess of data from eight of 262,144 locations in the

static storage array. Thus, the unique address

Mode

E

G

W

DQ0-DQ7

Power

Deselect

4.75V to 5.5V

or

4.5V to 5.5V

X

X

High Z

Standby

Write

Active

Read

Active

Read

High Z

Active

Deselect

X

X

X

High Z

CMOS Standby

Deselect

X

X

X

High Z

Battery Back-up Mode

Table 3. Operating Modes

DESCRIPTION (cont’d)

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M48Z30, M48Z30Y