Comchip Technology CO., LTD.

RoHS Device

Halogen Free

SMD ESD Protection Diode

AQW-JP028

Page 1

REV:A

Features

- Solid-state silicon-avalanche technology.

- Low clamping voltage.

- Bi-directional configurations.

- Low leakage current.

ACPDWQ5V0P-HF

- Case: CSP1006-2L package, molded plastic.

Mechanical data

- Mounting position: Any.

- Terminals: Solderable per MIL-STD-750,

method 2026.

Dimensions in inches and (millimeter)

0.041(1.05)

0.039(0.99)

0.026(0.65)

0.023(0.59)

0.016(0.40)

0.014(0.35)

0.002(0.05)

Max.

0.022(0.55)

0.018(0.45)

0.012(0.30)

0.008(0.20)

0.026(0.65)

Nom.

CSP1006-2L

Circuit Diagram

2

1

2

1

- IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)

IEC 61000-4-5 (Lightning) 2A (8/20µs)

Maximum Rating (at TA=25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

Conditions

Peak pulse power

PPP

W

Operating junction temperature range

TJ

°C

Storage temperature range

TSTG

°C

kV

IEC 61000-4-2(air)

IEC 61000-4-2(contact)

ESD capability (Note 1)

Peak pulse current

IPP

A

TP = 8/20µs

TP = 8/20µs

ESD

Electrical Characteristics (at TA=25°C unless otherwise noted)

Symbol

Typ

Parameter

Min

Max

Unit

Conditions

V

VRWM

5

Breakdown voltage

VBR

IT = 1mA

6

Reverse leakage current

IR

nA

VRWM = 5V

100

V

8

VC

V

TLP = 16A, TP = 100ns

45

Lead soldering temperature (10s)

TL

°C

Junction capacitance

CJ

pF

VR = 0V, f = 1MHz

0.08

Clamping voltage

±15

±8

260

-55 to +125

-55 to +150

0.12

40

2

2

Ω

RDYN

Dynamic resistance

IEC 61000-4-2 0~+8kV, contact mode, T=25°C

Clamping voltage

V

IPP = 1A, TP = 8/20µs

VC

14

V

IPP = 2A, TP = 8/20µs

VC

18

20

Note: 1. Device stressed with ten non-repetitive ESD pulses.

Working peak reverse voltage

- AEC-Q101 Qualified.