DMTH10H4M6SPS

Document number: DS41950 Rev. 2 - 2

2 of 7

www.diodes.com

April 2020

© Diodes Incorporated

DMTH10H4M6SPS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

100

V

Gate-Source Voltage

VGSS

±20

V

Continuous Drain Current, VGS = 10V (Note 5)

Steady

State

TA = +25°C

TA = +100°C

ID

20

14

A

Continuous Drain Current, VGS = 10V (Note 6)

Steady

State

TC = +25°C

TC = +100°C

(Note 9)

ID

100

100

A

Pulsed Drain Current (10

μs Pulse, Duty Cycle = 1%)

IDM

400

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

65

A

Pulsed Body Diode Forward Current (10µs Pulse, TC = +25°C, Package Limited)

ISM

400

A

Avalanche Current (Note 7) L = 0.3mH

IAS

41

A

Avalanche Energy (Note 7) L = 0.3mH

EAS

252

mJ

Thermal Characteristics

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

TA = +25°C

PD

2.7

W

Thermal Resistance, Junction to Ambient (Note 5)

RθJA

54

°C/W

Total Power Dissipation (Note 6)

TC = +25°C

PD

136

W

Thermal Resistance, Junction to Case (Note 6)

RθJC

1.1

°C/W

Operating and Storage Temperature Range

TJ, TSTG

-55 to +175

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

BVDSS

100

—

—

V

VGS = 0V, ID = 10mA

Zero Gate Voltage Drain Current

IDSS

—

—

1

µA

VDS = 80V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

VGS(TH)

2

—

4

V

VDS = VGS, ID = 250µA

Static Drain-Source On-Resistance

RDS(ON)

—

3

4.6

m

Ω

VGS = 10V, ID = 30A

Diode Forward Voltage

VSD

—

0.8

1.2

V

VGS = 0V, IS = 30A

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

Ciss

—

4327

—

pF

VDS = 50V, VGS = 0V

f = 1MHz

Output Capacitance

Coss

—

1335

—

Reverse Transfer Capacitance

Crss

—

39

—

Gate Resistance

RG

—

2.1

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge

QG

—

66

—

nC



VDD = 50V, ID = 30A,

VGS = 10V

Gate-Source Charge

QGS

—

18

—

Gate-Drain Charge

QGD

—

17

—

Turn-On Delay Time

tD(ON)

—

15.2

—

ns

VDD = 50V, VGS = 10V,

ID = 30A, RG = 4.7Ω, RL = 1.1Ω

Turn-On Rise Time

tR

—

26.4

—

Turn-Off Delay Time

tD(OFF)

—

44.9

—

Turn-Off Fall Time

tF

—

28.2

—

Reverse Recovery Time

tRR

—

63

—

ns

IF = 22.5A, di/dt = 100A/µs

Reverse Recovery Charge

QRR

—

136

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout.

6. Thermal resistance from junction to soldering point (on the exposed drain pad).

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

9. Package limited.