DMNH6009SPS

Document number: DS41482 Rev. 3 - 2

3 of 9

www.diodes.com

March 2020

© Diodes Incorporated

DMNH6009SPS

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 9)

Drain-Source Breakdown Voltage

BVDSS

60

—

—

V

VGS = 0V, ID = 1mA

Zero Gate Voltage Drain Current, TJ = +25°C

IDSS

—

—

1

µA

VDS = 48V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±20V, VDS = 0V

ON CHARACTERISTICS (Note 9)

Gate Threshold Voltage

VGS(TH)

1

2

3

V

VDS = VGS, ID = 250μA

Static Drain-Source On-Resistance

RDS(ON)

—

4.6

7.3

m

Ω

VGS = 10V, ID = 50A

Static Drain-Source On-Resistance

RDS(ON)

—

7.1

15

m

Ω

VGS = 4.5V, ID = 25A

Diode Forward Voltage

VSD

—

0.7

1.2

V

VGS = 0V, IS = 1.7A

DYNAMIC CHARACTERISTICS (Note 10)

Input Capacitance

Ciss

—

1882

—

pF

VDS = 30V, VGS = 0V,

f = 1MHz

Output Capacitance

Coss

—

374

—

pF

Reverse Transfer Capacitance

Crss

—

111

—

pF

Gate Resistance

Rg

—

2.1

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = 4.5V)

Qg

—

18.5

—

nC

VDS = 30V, ID = 25A

Total Gate Charge (VGS = 10V)

Qg

—

37.3

—

nC

Gate-Source Charge

Qgs

—

5.0

—

nC

Gate-Drain Charge

Qgd

—

11.2

—

nC

Turn-On Delay Time

tD(ON)

—

5.7

—

ns

VGS = 10V, VDS = 30V,

Rg = 3Ω, ID = 25A

Turn-On Rise Time

tR

—

7.5

—

ns

Turn-Off Delay Time

tD(OFF)

—

16.9

—

ns

Turn-Off Fall Time

tF

—

6.3

—

ns

Body Diode Reverse Recovery Time

tRR

—



32

—



ns

IF = 25A, di/dt = 100A/μs

Body Diode Reverse Recovery Charge

QRR

—



30

—



nC

Notes:

9. Short duration pulse test used to minimize self-heating effect.

10. Guaranteed by design. Not subject to product testing.