Unit

V

V

nS

Max.

0.95

200

50

35

35

Min.

40

Symbol

tS

fT

td

tr

tf

Electrical Characteristics (at TA=25°C unless otherwise noted)

IC = 10mA , IB1 = 1mA

Conditions

VCC = 3.0V

BE(off)

= 0.5V

, V

VCC = 3.0V, IC = 10mA,

IB1 = IB2 = 1mA

Characteristics

Fall Time

Storage Time

Delay Time

Rise Time

IC = 1mA , IB = 0

V(BR)CEO

Collector-Emitter breakdown voltage

V

nA

μA

0.1

50

V

IC = 10μA, IE = 0

V(BR)CBO

60

Collector-Base breakdown voltage

IE = 10μA, IC = 0

V(BR)EBO

6

Emitter-Base breakdown voltage

VCB = 60V , IE = 0

ICBO

Collector cut-off current

VCE = 30V V

= 3V

,

BE(off)

ICEX

Collector cut-off current

VCE(sat)

0.3

V

IC = 50mA IB = 5mA

,

IC = 50mA IB = 5mA

,

VBE(sat)

DC current gain

VEB = 5V IC = 0

,

VCE = 1V IC = 10mA

,

hFE

0.1

100

300

Collector-Emitter saturation voltage

Base-Emitter saturation voltage

nS

nS

nS

300

MHZ

VCE = 20V , IC = 10mA f = 100MHZ

,

Transition frequency

General Purpose Transistor

Emitter cut-off current

μA

IEBO

Page 2

Comchip Technology CO., LTD.

REV:A

QW-JTR27

Company reserves the right to improve product design , functions and reliability without notice.

Collector Current , Ic (mA)

0.1

10

100

10

100

1000

Fig.1 - Static Characteristic

Collector-Emitter Voltage, VCE (V)

0

2

14

20

0.0

0.4

1.0

1.2

Fig.2 - hFE— IC

Ta=25°C

COMMON EMITTER

16

200

Rating And Characteristic Curves (TK3904LED03-HF)

COMMON EMITTER

VCE = 1V

1

0.8

0.6

0.2

4

6

8

10

18

12

B

IB=8.5uA

17uA

25.5uA

34uA

42.5uA

51uA

59.5uA

68uA

76.5uA

76.5uA

85uA

Typ.

Ta=25°C

Ta=100°C