Fig.1 - Static Characteristic

Collector-Emitter Voltage, VCE (V)

-500µA

COMMON

EMITTER

Ta=25°C

-4

-20

-0

-8

-12

-16

0

-60

-100

IB=

µA

-50

-450µA

-400µA

-350µA

-300µA

-250µA

-200µA

-150µA

-100µA

-80

-40

-20

Collector Current, Ic (mA)

-0.1

-10

-200

0

Fig.2 - hFE — IC

200

300

-100

COMMON EMITTER

VCE=1V

TA=100

TA=25°C

TA=100°C

-1

100

Rating and Characteristic Curves (MMST3906-HF)

Symbol

Parameter

Conditions

Min.

Max.

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

IC=-10μA, IE=0

IC=-1mA, IB=0

IE=-10μA, IC=0

VCE=-30V, VEB(Off)=-3V

VCE=-1V, IC=-100µA

VCE=-1V, IC=-1mA

VCE=-1V, IC=-10mA

IC=-50mA, IB=-5mA

IC=-50mA, IB=-5mA

VCE=-20V, IC=-10mA, f=100MHz

V(BR)EBO

*

ICEX

*

fT

-40

-40

-5

60

80

100

250

V

-50

300

-0.2

-0.85

V

V

V

nA

V

V

MHZ

hFE

*

Typ.

VCE(sat)

*

VBE(sat)

*

IC=-10mA, IB=-1mA

IC=-10mA, IB=-1mA

-0.3

V

-0.95

V

Output capacitance

VCB=-5V, IE=0, f=1MHz

4.5

pF

Cob

V(BR)CEO

*

*Pulse test: pulse width ≤300µs, duty cycle≤2.0%

V(BR)CBO*

Base cut-off current

VCE=-30V, VEB(Off)=-3V

IBL*

-50

nA

-0.65

Delay time

Storage time

Rise time

Fall time

VCC=-3V , VBE=-0.5V

IC=-10mA , IB1=-1mA

VCC=-3V , IC=-10mA

IB1=IB2=-1mA

td

tr

ts

tf

35

35

225

75

nS

nS

nS

nS

Input capacitance

VEB=-0.5V, IC=0, f=1MHz

Cib

pF

10

Electrical Characteristics (at TA=25°C unless otherwise noted)

Comchip Technology CO., LTD.

REV:B

Page 2

QW-JTR26

General Purpose Transistor