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M36W432 bảng dữ liệu(PDF) 51 Page - STMicroelectronics

tên linh kiện M36W432
Giải thích chi tiết về linh kiện  32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
PDF  66 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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M36W432 bảng dữ liệu(HTML) 51 Page - STMicroelectronics

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M36W432TG, M36W432BG
Table 30. CFI Query System Interface Information
Offset
Data
Description
Value
1Bh
0027h
VDDF Logic Supply Minimum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
2.7V
1Ch
0036h
VDDF Logic Supply Maximum Program/Erase or Write voltage
bit 7 to 4
BCD value in volts
bit 3 to 0
BCD value in 100 mV
3.6V
1Dh
00B4h
VPPF [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
11.4V
1Eh
00C6h
VPPF [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
HEX value in volts
bit 3 to 0
BCD value in 100 mV
12.6V
1Fh
0004h
Typical time-out per single word program = 2n µs
16µs
20h
0004h
Typical time-out for Double/ Quadruple Word Program = 2n µs
16µs
21h
000Ah
Typical time-out per individual block erase = 2n ms
1s
22h
0000h
Typical time-out for full chip erase = 2n ms
NA
23h
0005h
Maximum time-out for word program = 2n times typical
512µs
24h
0005h
Maximum time-out for Double/ Quadruple Word Program = 2n times typical
512µs
25h
0003h
Maximum time-out per individual block erase = 2n times typical
8s
26h
0000h
Maximum time-out for chip erase = 2n times typical
NA



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