AP4414A datasheet(1/7 Pages) APME

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AP4414A

30V N-Channel Enhancement Mode MOSFET

AP4414A REV1.0

永源微電子科技有限公司

Description

The AP4414A uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=30V ID =30A

RDS(ON) < 5.8mΩ @ VGS=10V

（Type：4.8mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP4414A

SOP-8L

AP4414A XXXX YYYY

3000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

30

A

ID@TC=75℃

Continuous Drain Current, VGS @ 10V1

22

A

IDM

Pulsed Drain Current2

120

A

EAS

Single Pulse Avalanche Energy3

56

mJ

IAS

Avalanche Current

15

A

PD@TC=25℃

Total Power Dissipation4

46

W

PD@TA=25℃

Total Power Dissipation4

2.72

W

TSTG

Storage Temperature Range

-55 to 175

℃

TJ

Operating Junction Temperature Range

-55 to 175

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃

/W

RθJC

Thermal Resistance Junction-Case1

2.72

℃

/W

Số phần tương tự - AP4414A

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