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STGF30H65DFB2 bảng dữ liệu(PDF) 4 Page - STMicroelectronics

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Table 5. Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCC = 400 V, IC = 30 A,
VGE = 15 V, RG = 6.8 Ω
(see Figure 27. Test circuit for inductive
load switching)
-
18.4
-
ns
tr
Current rise time
-
5.8
-
ns
Eon(1)
Turn-on switching energy
-
270
-
μJ
td(off)
Turn-off delay time
-
71
-
ns
tf
Current fall time
-
41
-
ns
Eoff (2)
Turn-off switching energy
-
310
-
µJ
td(on)
Turn-on delay time
VCC = 400 V, IC = 30 A,
VGE = 15 V, RG = 6.8 Ω, TJ = 175 °C
(see Figure 27. Test circuit for inductive
load switching)
-
19
-
ns
tr
Current rise time
-
8.5
-
ns
Eon(1)
Turn-on switching energy
-
477
-
μJ
td(off)
Turn-off delay time
-
79
-
ns
tf
Current fall time
-
105
-
ns
Eoff (2)
Turn-off switching energy
-
643
-
µJ
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 30 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs
(see Figure 30. Diode reverse recovery
waveform)
-
115
-
ns
Qrr
Reverse recovery charge
-
600
-
nC
Irrm
Reverse recovery current
-
15
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
700
-
A/µs
Err
Reverse recovery energy
-
145
-
µJ
trr
Reverse recovery time
IF = 30 A, VR = 400 V,
VGE = 15 V, di/dt = 1000 A/µs,
TJ = 175 °C
(see Figure 30. Diode reverse recovery
waveform)
-
221
-
ns
Qrr
Reverse recovery charge
-
2550
-
nC
Irrm
Reverse recovery current
-
26
-
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
-
192
-
A/µs
Err
Reverse recovery energy
-
720
-
µJ
STGF30H65DFB2
Electrical characteristics
DS13256 - Rev 2
page 4/15



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