AP250N06TLG2

60V N-Channel Enhancement Mode MOSFET

AP250N06TLG2 REV1.0

永源微电子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

60

-

-

V

lGSS

Gate-body Leakage Current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSS TJ=25°C

Zero Gate Voltage Drain Current

VDS = 60V, VGS = 0V

1

μA

IDSS TJ=100°C

100

μA

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = 250µA

1.2

1.8

2.5

V

RDS(on)

Drain-Source On-Resistance4

VGS = 10V, ID = 20A

-

1.6

2.2

mΩ

VGS = 4.5V, ID = 10A

-

2.1

3.5

gfs

Forward Transconductance4

VDS = 5V, ID = 20A

-

78

-

S

Ciss

Input Capacitance

VDS = 30V, VGS =0V,

f =1MHz

-

4950

-

pF

Coss

Output Capacitance

-

1260

-

Crss

Reverse Transfer Capacitance

-

25

-

RG

Gate Resistance

f =1MHz

-

2.4

-

Ω

Qg

Total Gate Charge

VGS = 10V, VDS = 30V,

ID= 20A

-

73.5

-

nC

Qgs

Gate-Source Charge

-

12.5

-

Qgd

Gate-Drain Charge

-

16

-

td(on)

Turn-on Delay Time

VGS =10V, VDD = 30V,

RG = 3Ω, ID= 20A

-

20

-

ns

tr

Rise Time

-

17

-

td(off)

Turn-off Delay Time

-

84

-

tf

Fall Time

-

25

-

trr

Body Diode Reverse Recovery Time

IF=20A , dI/dt=100A/μs

-

25

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

90

-

nC

VSD

Diode Forward Voltage4

IS = 20A, VGS = 0V

-

-

1.2

V

IS

Continuous Source Current

TC=25°C

-

-

250

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The power dissipation is limited by 175℃ junction temperature

4、EAS condition: TJ=25℃, VDD=48V, VG=10V, RG=25Ω, L=0.1mH, IAS=55A

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

.