Rating and Characteristic Curves (MMBTA06-HF)

General Purpose Transistor

Electrical Characteristics (at TA=25°C unless otherwise noted)

Parameter

Symbol

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-base cut-off current

Collector-emitter cut-off current

Collector-emitter saturation voltage

Base-emitter saturation voltage

Transition frequency

Conditions

VCBO

VCEO

VEBO

ICBO

ICEO

hFE(1)

VCE(sat)

VBE(sat)

fT

IC = 100μA, IE = 0

IC = 1mA, IB = 0

IE = 100µA, IC = 0

VCB = 60V, IE = 0

VCE = 60V, IB = 0

VCE = 1V, IC = 10mA

IC = 100mA, IB = 10mA

IC = 100mA, IB = 10mA

VCE = 2V, IC = 10mA, f = 100MHz

80

80

4

100

100

100

100

400

0.25

1.20

Min

Max

V

V

V

nA

V

V

MHz

DC current gain

VEB = 3V, IC = 0

100

hFE(2)

VCE = 1V, IC = 100mA

100

nA

Emitter-base cut-off current

IEBO

nA

QW-JTR87

Page 2

REV:B

Comchip Technology CO., LTD.

Company reserves the right to improve product design , functions and reliability without notice.

Fig.1 - Static Characteristic

Collector-Emitter Voltage, VCE (V)

0

1

2

0

50

100

Ta=25°C

IB=0.05mA

0.1mA

0.15mA

0.2mA

0.25mA

0.3mA

0.35mA

0.4mA

0.45mA

0.5mA

Collector Current, Ic (mA)

Fig.2 - DC Current Gain

0.1

1

10

100

500

10

100

1000

VCE=1V

Ta=125°C

Ta=100°C

Ta=25°C

Ta=-25°C

100

Collector Current, Ic (mA)

0.1

0.1

0.01

Fig.3 - Collector-Emitter Saturation Voltage

1

10

500

1

IC:IB=10:1

Ta=125°C

Ta=100°C

Ta=25°C

Ta=-25°C

Fig.4 - Base-Emitter Saturation Voltage

Collector Current, Ic (mA)

500

1

1

0.1

10

100

0.1

Ta=125°C

Ta=100°C

Ta=25°C

Ta=-25°C

IC:IB=10:1