AP200N06NF

65V N-Channel Enhancement Mode MOSFET

AP200N06NF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

65

72

-

V

lGSS

Gate-body Leakage current

VDS = 0V, VGS = ±20V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current TJ=25°C

VDS = 60V, VGS = 0V

-

-

1

μA

Zero Gate Voltage Drain Current TJ=100°C

-

-

100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = 250µA

2

2.9

4

V

RDS(on)

Drain-Source on-Resistance4

VGS = 10V, ID = 20A

-

1.6

2.0

mΩ

gfs

Forward Transconductance4

VDS=10V, ID=20A

-

62

-

S

Ciss

Input Capacitance

VDS = 30V, VGS =0V, f

=1MHz

-

5990

-

pF

Coss

Output Capacitance

-

2257

-

Crss

Reverse Transfer Capacitance

-

86

-

Rg

Gate Resistance

f =1MHz

-

2.6

-

Ω

Qg

Total Gate Charge

VGS = 10V, VDS = 30V,

ID=20A

-

102

-

nC

Qgs

Gate-Source Charge

-

24.6

-

Qgd

Gate-Drain Charge

-

28.2

-

td(on)

Turn-on Delay Time

VGS =10V, VDD =30V, RG

= 3Ω, ID= 20A

-

15.6

-

ns

tr

Rise Time

-

29

-

td(off)

Turn-off Delay Time

-

63

-

tf

Fall Time

-

51

-

trr

Body Diode Reverse Recovery Time

IF = 20A, dI/dt=100A/µs

-

80

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

114

-

nC

VSD

Diode Forward Voltage4

IS = 20A, VGS = 0V

-

-

1.2

V

IS

Continuous Source Current

TC=25°C

-

-

378

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The power dissipation is limited by 175

℃ junction temperature

4、EAS condition: TJ=25

℃, VDD=48V, VG=10V, RG=25Ω, L=0.1mH, IAS= 55A

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

.