AP200N03PIT

30V N-Channel Enhancement Mode MOSFET

AP200N03P/T RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=250μA

30

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS =30V, VGS=0V,

-

-

1.0

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1.0

1.6

2.5

V

RDS(on)

Static Drain-Source on-Resistance

VGS=10V, ID=30A

-

1.6

2.3

mΩ

VGS=4.5V, ID=20A

-

2.6

3.7

Ciss

Input Capacitance

VDS=15V, VGS=0V,

f=1.0MHz

-

6847

-

pF

Coss

Output Capacitance

-

940

-

pF

Crss

Reverse Transfer Capacitance

-

604

-

pF

Qg

Total Gate Charge

VDS=15V, ID=30A,

VGS=10V

-

93

-

nC

Qgs

Gate-Source Charge

-

14

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

21

-

nC

td(on)

Turn-on Delay Time

VDS=15V,

ID=30A, RGEN=3Ω,

VGS=10V

-

16

-

ns

tr

Turn-on Rise Time

-

9

-

ns

td(off)

Turn-off Delay Time

-

65

-

ns

tf

Turn-off Fall Time

-

18

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

200

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

760

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=30A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF=20A,dI/dt=100A/μs

-

29

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

19

-

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1Mh,IAS=42A

4、The power dissipation is limited by 175

℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.