AP150P03NF

-30V P-Channel Enhancement Mode MOSFET

AP150P03NF RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V ID=-250μA

-30

-35

V

IDSS

Zero Gate Voltage Drain Current

VDS=-30V, VGS=0V

-1

μA

IGSS

Gate-Body Leakage Current

VGS=±20V, VDS=0V

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250μA

-1

-1.7

-2.5

V

RDS(ON)

Drain-Source On-State Resistance

VGS=-10V, ID=-20A

2.5

3.2

mΩ

VGS=-4.5V, ID=-20A

4.0

5.2

mΩ

gFS

Forward Transconductance

VDS=-5V, ID=-20A

65

S

Ciss

Input Capacitance

VDS=-15V, VGS=0V, f=1.0MHz

7000

pF

Coss

Output Capacitance

820

pF

Crss

Reverse Transfer Capacitance

540

pF

Rg

Gate resistance

VGS=0V, VDS=0V, f=1.0MHz

2.2

Ω

td(on)

Turn-on Delay Time

VGS=-10V, VDS=-15V,

RL=0.75Ω, RGEN=3Ω

14

nS

tr

Turn-on Rise Time

13

nS

td(off)

Turn-Off Delay Time

65

nS

tf

Turn-Off Fall Time

37

nS

Qg

Total Gate Charge

VGS=-10V, VDS=-15V, ID=-20A

130

nC

Qgs

Gate-Source Charge

12

nC

Qgd

Gate-Drain Charge

31

nC

ISD

Source-Drain Current (Body Diode)

-150

A

VSD

Forward on Voltage (Note 3)

VGS=0V, IS=-20A

-1.3

V

trr

Reverse Recovery Time

IF=-20A, di/dt=100A/μs

30

ns

Qrr

Reverse Recovery Charge

IF=-20A, di/dt=100A/μs

40

nC

Note :

1

、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、 The EAS data shows Max. rating . The test condition is TJ =25℃, VDD=-15V, VG=-10V, RG=25Ω, L=0.5mH, IAS=-30A

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.