AP150N04PIT

40V N-Channel Enhancement Mode MOSFET

AP150N04P/T RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V ID=250μA

40

44

V

IDSS

Zero Gate Voltage Drain Current

VDS=40V, VGS=0V

1

μA

IGSS

Gate-Body Leakage Current

VGS=±20V, VDS=0V

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250μA

1.0

1.8

2.5

V

gFS

Forward Transconductance

VDS=5V, ID=20A

38

S

RDS(ON)

Drain-Source On-State Resistance

VGS=10V, ID=20A

2.4

2.9

mΩ

VGS=4.5V, ID=20A

3.5

4.5

mΩ

Ciss

Input Capacitance

VDS=20V,VGS=0V,

f=1.0MHz

6460

pF

Coss

Output Capacitance

455

pF

Crss

Reverse Transfer Capacitance

276

pF

Rg

Gate resistance

VGS=0V, VDS=0V, f=1.0MHz

0.67

Ω

td(on)

Turn-on Delay Time

VGS=10V, VDS=20V,

RL=1Ω, RGEN=3Ω

18

nS

tr

Turn-on Rise Time

4.4

nS

td(off)

Turn-Off Delay Time

67

nS

tf

Turn-Off Fall Time

9.5

nS

Qg

Total Gate Charge

VGS=10V, VDS=20V, ID=20A

112

nC

Qgs

Gate-Source Charge

16.7

nC

Qgd

Gate-Drain Charge

26.5

nC

ISD

Source-Drain Current (Body

Diode)

144

A

VSD

Forward on Voltage (Note 3)

VGS=0V, IS=20A

1.2

V

trr

Reverse Recovery Time

IF=20A, dI/dt=500A/ s

6

ns

Qrr

Reverse Recovery Charge

IF=20A, dI/dt=500A/ s

14

nC

Note :

1

、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2

、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3

、The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=20A

4

、The power dissipation is limited by 150℃ junction temperature

5

、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.