AP150N04HT datasheet(1/8 Pages) APME

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AP150N04HPIT

40V N-Channel Enhancement Mode MOSFET

AP150N04HP/T REV1.1

永源微電子科技有限公司

Description

The AP150N04HP/T uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 40V ID =150A

RDS(ON) < 4.0mΩ @ VGS=10V (Type：3.2mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP150N04HP

TO-220-3L

AP150N04HP XXX YYYY

1000

AP150N04HT

TO-263-3L

AP150N04HT XXX YYYY

800

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

150

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

102

A

IDM

Pulsed Drain Current2

576

A

EAS

Single Pulse Avalanche Energy3

576

mJ

IAS

Avalanche Current

40

A

PD@TC=25

℃

Total Power Dissipation4

57

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient (Steady State)1

62

℃/W

RθJC

Thermal Resistance Junction-Case1

1.3

℃/W

Số phần tương tự - AP150N04HT

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