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AP120P03D
-30V P-Channel Enhancement Mode MOSFET
AP120P03D RVE1.0
永源微電子科技有限公司
Description
The AP120P03D uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = -30V
ID =-120A
RDS(ON) <5.5m
Ω @ VGS=-10V （Type：3.8mΩ）
Application
Lithium battery protection
Wireless impact
Mobile phone fast charging
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP120P03D
TO-252-3L
AP120P03D XXX YYYY
2500
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Max.
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
±20
V
ID
Continuous Drain Current TC = 25℃
-120
A
ID
Continuous Drain Current TC = 100℃
-65
A
IDM
Pulsed Drain Current note1
-400
A
EAS
Single Pulsed Avalanche Energy note2
225
mJ
PD
Power Dissipation TC = 25℃
103
W
RθJC
Thermal Resistance, Junction to Case
1.46
℃/W
TJ, TSTG
Operating and Storage Temperature Range
-55 to +175
℃


Số phần tương tự - AP120P03D

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