AP120P02D

-20V P-Channel Enhancement Mode MOSFET

AP120P02D REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min

Typ

Max

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID= -250μA

-20

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS= -20V, VGS=0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS=0V, VGS= ±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID= -250μA

-0.5

-0.65

-1.2

V

RDS(on)

Static Drain-Source on-Resistance

VGS= -4.5V, ID= -30A

-

2.1

2.8

mΩ

RDS(on)

Static Drain-Source on-Resistance

VGS= -2.5V, ID= -20A

-

2.7

3.8

mΩ

Ciss

Input Capacitance

VDS= -10V, VGS=0V,

f=1.0MHz

-

15000

-

nF

Coss

Output Capacitance

-

1600

-

pF

Crss

Reverse Transfer Capacitance

-

1068

-

pF

Qg

Total Gate Charge

VDS= -10V, ID= -20A,

VGS= -4.5V

-

100

-

nC

Qgs

Gate-Source Charge

-

21

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

32

-

nC

td(on)

Turn-on Delay Time

VDD = -10V, RL=0.5Ω,

VGS= -4.5V, RGEN=3Ω

-

20

-

ns

tr

Turn-on Rise Time

-

50

-

ns

td(off)

Turn-off Delay Time

-

100

-

ns

tf

Turn-off Fall Time

-

40

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-10

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-340

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS= -30A

-

-0.8

-1.2

V

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The EAS data shows Max. rating. The test condition is VDD=-25V, VGS=-10V, L=0.4mH, I AS = -20A.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.