AP120N30MP datasheet(2/8 Pages) APME

2 / 8 page

AP120N30MP

300V N-Channel Enhancement Mode MOSFET

AP120N30MP REV1.0

永源微電子科技有限公司

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Units

VDSS

Drain to Source Breakdown Voltage

VGS=0V, ID=250µA

300

350

IDSS

Drain to Source Leakage Current

VDS=300V, VGS=0V,Ta=25℃

1.0

µA

VDS=300V, VGS=0V,Ta=125℃

100

µA

IGSS(F)

Gate to Source Forward Leakage

VGS=+20V

100

IGSS(R)

Gate to Source Reverse Leakage

VGS=-20V

-100

RDS(ON)

Drain-to-Source On-Resistance

VGS=10V, ID=42A

mΩ

VGS(TH)

Gate Threshold Voltage

VDS=VGS, ID=250µA

3.3

4.1

5.0

gfs

Forward Trans conductance

VDS=25V, ID=40A

Gate Resistance

VGS=0V VDS open f=1.0MHz

1.3

Ω

Ciss

Input Capacitance

VGS=0V VDS=25V f=1.0MHz

12142

Coss

Output Capacitance

560

Crss

Reverse Transfer Capacitance

260

td(ON)

Turn-on Delay Time

ID=42A, VDS=100V

VGS=10V, Rg=1.0Ω

Rise Time

td(OFF)

Turn-Off Delay Time

Fall Time

Total Gate Charge

ID=42A, VDD=150V

VGS=10V

208

Qgs

Gate to Source Charge

67.6

Qgd

Gate to Drain (“Miller”) Charge

ISD

Continuous Source Current (Body Diode)

IS=42A, VGS=0V

120

ISM

Maximum Pulsed Current (Body Diode)

520

VSD

Diode Forward Voltage

1.2

trr

Reverse Recovery Time

IS=42A,Tj=25℃，VDD=255V

dIF/dt=100A/μs, VGS=0V

351

Qrr

Reverse Recovery Charge

2520

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is TJ = 25°C, L=0.3mH, RG=25Ω, VDD=50V，VGS=10V

4、The ISD=40A,di/dt≤100A/us, VDD≤BVDS, Start TJ=25

℃

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

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