AP120N07FIPIT

68V N-Channel Enhancement Mode MOSFET

AP120N07F/P/T RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250µA

68

-

-

V

lGSS

Gate-body Leakage current

VDS = 0V, VGS =±20V

-

-

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS =70V, VGS=0V

-

-

10

μA

IDSS TJ=55°C

Zero Gate Voltage Drain Current

-

-

100

VGS(th)

Gate-Threshold Voltage

VDS = VGS, ID = 250µA

2

3

4

V

RDS(on)

Drain-Source on-Resistance2

VGS = 10V, ID = 20A

-

5.7

6.5

mΩ

gfs

Forward Transconductance2

VDS=5V , ID=20A

-

76

-

S

Ciss

Input Capacitance

VDS = 35V, VGS =0V, f =1MHz

-

4030

-

pF

Coss

Output Capacitance

-

271

-

Crss

Reverse Transfer Capacitance

-

189

-

Rg

Gate Resistance

VDS = 0V, VGS =0V, f =1MHz

-

1.2

-

Ω

Qg

Total Gate Charge(10V)

VGS = 10V, VDS = 35V, ID=20A

-

92

-

nC

Qgs

Gate-Source Charge

-

22

-

Qgd

Gate-Drain Charge

-

31

-

td(on)

Turn-On Delay Time

VGS =10V, VDD =35V, RG =

4.7Ω, ID= 20A

-

36

-

ns

tr

Rise Time

-

77

-

td(off)

Turn-Off Delay Time

-

92

-

tf

Fall Time

-

34

-

VSD

Diode Forward Voltage2

IS = 1A, VGS = 0V

-

-

1

V

IS

Continuous Source Current1,5

VG=VD=0V, Force Current

-

-

100

A

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond≦ 300us

duty cycle ≦ 2%, duty cycle ition is TJ =25℃, VDD =25V, VG =10V, RG =25Ω, L=0.4mH, IAS =30A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.