AP100N25MP datasheet(1/7 Pages) APME

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AP100N25MP

250V N-Channel Enhancement Mode MOSFET

AP100N25MP RVE1.0

永源微電子科技有限公司

Description

The AP100N25MP uses advanced Trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as Hight as 12V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 250V ID =100A

RDS(ON) < 33mΩ @ VGS=10V （Type：28mΩ）

Application

UPS

BLDC

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP100N25MP

TO-247-3L

AP100N25MP XXX YYYY

300

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDSS

Drain-to-Source Voltage

250

V

ID@TA=25

℃

Continuous Drain Current VGS @ 10V

100

A

ID@TA=100

℃

Continuous Drain Current VGS @ 10V

750

A

IDM

Pulsed Drain Current (pulse width limited by TJM)

300

A

VGS

Gate-to-Source Voltage

±30

V

EAS

Single Pulse Avalanche Energy

895

mJ

IAR a1

Avalanche Current

45

A

dv/dta2

Peak Diode Recovery dv/dt

5.0

V/ns

PD

Power Dissipation

360

W

TJ

，Tstg

Operating Junction and Storage Temperature Range

–55 to 150

℃

TL

Maximum Temperature for Soldering

300

℃

RθJC

Thermal Resistance, Junction-to-Case

0.45

℃/ W

RθJA

Thermal Resistance, Junction-to-Ambient

60

℃/ W

Số phần tương tự - AP100N25MP

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More results

Mô tả tương tự - AP100N25MP

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