TL051 datasheet(48/67 Pages) STMICROELECTRONICS

48 / 67 page

TL05x, TL05xA

ENHANCED-JFET LOW-OFFSET

OPERATIONAL AMPLIFIERS

SLOS178A – FEBRUARY 1997 - REVISED FEBRUARY 2003

POST OFFICE BOX 655303

• DALLAS, TEXAS 75265

APPLICATION INFORMATION

macromodel information

Macromodel information provided was derived using Microsim Parts

, the model-generation software used

with Microsim PSpice

. The Boyle macromodel (see Note 6 and subcircuit Figure 92) are generated using the

TL05x typical electrical and operating characteristics at TA = 25°C. Using this information, output simulations

of the following key parameters can be generated to a tolerance of 20% (in most cases):

D Maximum positive output voltage swing

D Maximum negative output voltage swing

D Slew rate

D Quiescent power dissipation

D Input bias current

D Open-loop voltage amplification

D Unity-gain frequency

D Common-mode rejection ratio

D Phase margin

D DC output resistance

D AC output resistance

D Short-circuit output current limit

NOTE 6: G. R. Boyle, B. M. Cohn, D. O. Pederson, and J. E. Solomon, “Macromodeling of Integrated Circuit Operational Amplifiers”, IEEE Journal

of Solid-State Circuits, SC-9, 353 (1974).

OUT

–

.SUBCKT TL05x 1 2 3 4 5

3.988E–12

15.00E–12

DLP

DLN

43DX

EGND 99

POLY (2) (3,0) (4,0) 0 .5 .5

POLY (5) VB VC VE VLP

+ VLN 0 2.875E6 –3E6 3E6 3E6 –3E6

12 292.2E–6

GCM 0

99 6.542E–9

ISS

DC 300.0E–6

HLIM 90

VLIM 1K

10 JX

100.0E3

RD1

3.422E3

RD2

3.422E3

R01

125

R02

125

11.11E3

RSS

666.7E6

DC 0

DC 3

DC 3.7

VLIM 7

DC 0

VLP

DC 28

VLN

DC 28

.MODEL DX D (IS=800.0E–18)

.MODEL JX PJF (IS=15.00E–12 BETA=185.2E–6

+ VTO=–.1)

.ENDS

VCC+

IN–

IN+

VCC–

VAD

RD1

RSS

ISS

RD2

EGND

GCM

VLIM

RO1

RO2

HLIM

DLP

DLN

VLN

VLP

Figure 92. Boyle Macromodel and Subcircuit

PSpice and Parts are trademarks of MicroSim Corporation.

Macromodels, simulation models, or other models provided by TI,

directly or indirectly, are not warranted by TI as fully representing all

of the specification and operating characteristics of the

semiconductor product to which the model relates.

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