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AP90N08NF
85V N-Channel Enhancement Mode MOSFET
AP90N08NF RVE1.0
永源微電子科技有限公司
Description
The AP90N08NF uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 10V.
This device is suitable for use as a Battery protection
or in other Switching application.
General Features
VDS = 85V ID =95A
RDS(ON) < 5.2mΩ VGS=10V (Type：4.5mΩ)
Application
Battery protection
Load switch
Uninterruptible power supply
Package Marking and Ordering Information
Product ID
Pack
Marking
Qty(PCS)
AP90N08NF
PDFN5*6-8L
AP90N08NF XXX YYYY
5000
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
85
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
95
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
75
A
IDM
Pulsed Drain Current
480
A
EAS
Single Pulse Avalanche Energy
560
mJ
IAS
Avalanche Current
43.4
A
PD@TC=25℃
Total Power Dissipation4
180
W
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
RθJA
Thermal Resistance Junction-Ambient
0.70
℃/W
RθJC
Thermal Resistance Junction-Case
62
℃/W


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