AP100N10P

100V N-Channel Enhancement Mode MOSFET

AP100N10P/T Rve3.8

臺灣永源微電子科技有限公司

Thermal Resistance

Parameter

Min.

Typ.

Max.

Units

RθJC

Junction-to-case

—

0.55

—

C/Wْ

RθJA

Junction-to-ambient

—

—

62

Electrical Characteristics( @TJ=25 Cْunless otherwise specified)

Parameter

Min.

Typ.

Max. Units

Test Conditions

BVDSS

Drain-to-Source breakdown voltage

100

—

—

V

VGS=0V,ID=250μA

RDS(on) Static Drain-to-Source on-resistance

—

11

16

mΩ

VGS=10V,ID=30A

VGS(th)

Gate threshold voltage

2.0

—

4.0

V

VDS=VGS,ID=250μA

IDSS

Drain-to-Source leakage current

—

—

2

μA

VDS=100V,VGS=0V

—

—

10

VDS=100V,

VGS=0V,TJ=105ْC

IGSS

Gate-to-Source forward leakage

—

—

100

nA

VGS=20V

Gate-to-Source reverse leakage

—

—

-100

VGS=-20V

Qg

Total gate charge

—

90

nC

ID=30A,VGS=10V

VDD=30V

Qgs

Gate-to-Source charge

—

20

—

Qgd

Gate-to-Drain("Miller") charge

—

31

—

td(on)

Turn-on delay time

—

18.2

nS

VDD=30V

ID=2A ,RL=15Ω

RG=2.5Ω

VGS=10V

tr

Rise time

—

15.6

td(off)

Turn-Off delay time

—

70.5

tf

Fall time

—

13.8

Ciss

Input capacitance

—

3150

pF

VGS=0V

VDS=25V

f=1.0MHZ

Coss

Output capacitance

—

350

Crss

Reverse transfer capacitance

—

240

IS

Continuous Source Current

(Body Diode)

—

—

75

A

MOSFET symbol

showing the

integral reverse p-n junction diode.

ISM

Pulsed Source Current

(Body Diode) ①

—

—

300

VSD

Diode Forward Voltage

—

—

1.3

V

TJ=52ْC,IS=60A,VGS=0V ③

trr

Reverse Recovery Time

－

57

—

nS

TJ=52ْC,IF=75A di/dt=100A/μs

③

Qrr

Reverse Recovery Charge

－

107

—

μC

ton

Forward Turn-on Time

Intrinsic turn-on time is negligible (turn-on is dominated by Ls + LD)

Note

1、Repetitive rating; pulse width limited by max junction temperature.

2、Test condition: L =0.3mH, VDD = 50V,Id=37A

3、

Pulse width≤300μS, duty cycle≤1.5% ; RG = 25Ω Starting TJ = 25°C

4、