AP100N08D datasheet(1/6 Pages) APME

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AP100N08D

80V N-Channel Enhancement Mode MOSFET

AP100N08D RVE1.0

永源微電子科技有限公司

Description

The AP100N08D uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 80V ID =100A

RDS(ON) < 6.8mΩ VGS=10V （Type：5.5mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP100N08D

TO-252-3L

AP100N08D XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

80

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1,6

100

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1,6

60

A

IDM

Pulsed Drain Current2

400

A

EAS

Single Pulse Avalanche Energy3

506

mJ

PD@TC=25

℃

Total Power Dissipation4

158

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

92

℃/W

RθJC

Thermal Resistance Junction-Case1

1.22

℃

/W

Số phần tương tự - AP100N08D

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