AP100N08CMP datasheet(1/7 Pages) APME

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AP100N08CMP

80V N-Channel Enhancement Mode MOSFET

AP100N08CMP REV1.1

永源微電子科技有限公司

Description

The AP100N08CMP is silicon N-channel Enhanced

VDMOSFET, is obtained by the self-aligned planar Technology

which reduce the conduction loss, improve switching

performance and enhance the avalanche energy. The transistor

can be used in various power switching circuit for system

miniaturization and higher efficiency.

General Features

VDS = 80V ID =100A

RDS(ON) < 15mΩ @ VGS=10V （Type：13mΩ）

Application

Uninterruptible Power Supply(UPS)

Power Factor Correction (PFC)

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP100N08CMP

TO-247-3L

AP100N08CMP XXX YYYY

1980

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

80

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V

100

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V

70

A

IDM

Pulsed Drain Current

480

A

EAS

Single Pulse Avalanche Energy

1054

mJ

IAS

Avalanche Current

60

A

PD@TC=25℃

Total Power Dissipation4

300

W

TSTG

Storage Temperature Range

-55 to 175

℃

TJ

Operating Junction Temperature Range

-55 to 175

℃

RθJA

Thermal Resistance Junction-Ambient

0.50

℃

/W

RθJC

Thermal Resistance Junction-Case

40

℃

/W

Số phần tương tự - AP100N08CMP

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