AP85N02DF datasheet(1/7 Pages) APME

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AP85N02DF

20V N-Channel Enhancement Mode MOSFET

AP85N02DF REV1.0

永源微電子科技有限公司

Description

The AP85N02DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 20V ID =85A

RDS(ON) < 3.2mΩ @ VGS=4.5V（Type：2.7mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP85N02DF

PDFN3X3-8L

AP85N02DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-Source Voltage

±12

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

85

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

58

A

IDM

Pulsed Drain Current2

360

A

EAS

Single Pulse Avalanche Energy3

156

mJ

IAS

Avalanche Current

45

A

PD@TC=25

℃

Total Power Dissipation4

54

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

85

℃/W

RθJC

Thermal Resistance Junction-Case1

2.2

℃/W

Số phần tương tự - AP85N02DF

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