AP80N06PT datasheet(1/7 Pages) APME

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AP80N06PIT

60V N-Channel Enhancement Mode MOSFET

AP80N06P/T REV1.0

永源微電子科技有限公司

Description

The AP80N06P/T uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 60V ID =80A

RDS(ON) < 8.5mΩ @ VGS=10V （Type：7.5mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP80N06P

TO-220-3L

AP80N06P XXX YYYY

1000

AP80N06T

TO-263-3L

AP80N06T XXX YYYY

800

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Value

Unit

VDS

Drain source voltage

60

V

VGS

Gate source voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

80

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

52

A

IDM

Pulsed drain current2)

250

A

IS

Diode forward current

37

A

PD

Power dissipation

70

W

EAS

Single pulsed avalanche energy)

100

mJ

Tstg

，Tj

Operation and storage temperature

-55 to 150

℃

RθJC

Thermal resistance, junction-case

2.14

℃/W

RθJA

Thermal resistance, junction-ambient4)

62.5

℃/W

Số phần tương tự - AP80N06PT

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
A POWER MICROELECTRONIC...	AP80N06BD	1Mb / 7P	60V N-Channel Enhancement Mode MOSFET REV1.0
	AP80N06D	754Kb / 7P	65V N-Channel Enhancement Mode MOSFET REV1.1
	AP80N06HP	777Kb / 7P	60V N-Channel Enhancement Mode MOSFET REV1.0
	AP80N06HPT	777Kb / 7P	60V N-Channel Enhancement Mode MOSFET REV1.0
	AP80N06HT	777Kb / 7P	60V N-Channel Enhancement Mode MOSFET REV1.0

More results

Mô tả tương tự - AP80N06PT

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