AP80N06NF

60V N-Channel Enhancement Mode MOSFET

AP80N06NF REV1.1

永源微电子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Test condition

Min.

Typ.

Max

Unit

BVDSS

Drain-source breakdown voltage

VGS=0 V, ID=250 μA

60

72

V

VGS(th)

Gate threshold voltage

VDS=VGS, ID=250 μA

1.2

1.8

2.5

V

RDS(ON)

Drain-source on-state resistance

VGS=10 V, ID=20 A

4.5

6.0

mΩ

RDS(ON)

Drain-source on-state resistance

VGS=4.5 V, ID=10 A

6.4

10

mΩ

IGSS

Gate-source leakage current

VGS=±20 V

±100

nA

IDSS

Drain-source leakage current

VDS=60 V, VGS=0 V

1

μA

Rg

Gate Resistance

f=1MHz

2.8

Ω

Ciss

Input capacitance

VGS=0 V,

VDS=50 V,

ƒ=100 kHz

2136

pF

Coss

Output capacitance

331.5

pF

Crss

Reverse transfer capacitance

10.6

pF

td(on)

Turn-on delay time

VGS=10 V,

VDS=50 V,

RG=2 Ω,

ID=25 A

22.9

ns

tr

Rise time

6.5

ns

td(off)

Turn-off delay time

45.7

ns

tf

Fall time

20.4

ns

Qg

Total gate charge

ID=25 A,

VDS=50 V,

VGS=10 V

30

nC

Qgs

Gate-source charge

5.8

nC

Qgd

Gate-drain charge

6.1

nC

Vplateau

Gate plateau voltage

3.6

V

VSD

Diode forward voltage

IS=20 A, VGS=0 V

1.3

V

trr

Reverse recovery time

IS=25A,

di/dt=100 A/μs

50.3

ns

Qrr

Reverse recovery charge

45.1

nC

Irrm

Peak reverse recovery current

1.5

A

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The power dissipation is limited by 175

℃ junction temperature

4、EAS condition: TJ=25

℃, VDD=25V,VGS=10V,L=0.1Mh,IAS=40A

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.

.