AP80N04NF datasheet(1/7 Pages) APME

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AP80N04NF

40V N-Channel Enhancement Mode MOSFET

AP80N04NF REV1.0

永源微電子科技有限公司

Description

The AP80N04NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 40V ID =80A

RDS(ON) <5.2mΩ @ VGS=10V (Type：4.5mΩ)

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP80N04NF

PDFN5*6-8L

AP80N04NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

80

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

44

A

IDM

Pulsed Drain Current2

280

A

EAS

Single Pulse Avalanche Energy3

121

mJ

IAS

Avalanche Current

35

A

PD@TC=25℃

Total Power Dissipation4

60

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient (Steady State)1

25

℃/W

RθJC

Thermal Resistance Junction-Case1

2.1

℃/W

Số phần tương tự - AP80N04NF

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