AP80N04DF datasheet(1/7 Pages) APME

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AP80N04DF

40V N-Channel Enhancement Mode MOSFET

永源微电

AP80N04DF Rve1.1

子科技有限公司

Description

The AP80N04DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a

Battery protection or in other Switching application.

General Features

VDS = 40V ID =80 A

RDS(ON) < 6.5mΩ @ VGS=10V

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP80N04DF

PDNF3*3-8L

AP80N04DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

80

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

58

A

IDM

Pulsed Drain Current2

150

A

EAS

Single Pulse Avalanche Energy3

110.5

mJ

IAS

Avalanche Current

47

A

PD@TC=25℃

Total Power Dissipation4

52.1

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-Ambient 1

62

℃

/W

RθJC

Thermal Resistance Junction-Case1

2.4

℃

/W

Số phần tương tự - AP80N04DF

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