AP80N04BD datasheet(1/7 Pages) APME

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AP80N04BD

40V N-Channel Enhancement Mode MOSFET

AP80N04BD REV1.0

永源微電子科技有限公司

Description

The AP80N04BD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 40V ID =80A

RDS(ON) < 8.0mΩ @ VGS=10V （Type：6.0mΩ）

Application

Wireless charging

Boost driver

Brushless motor

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP80N04BD

TO-252-3L

AP80N04BD XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

80

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

33

A

IDM

Pulsed Drain Current2

240

A

EAS

Single Pulse Avalanche Energy3

81

mJ

IAS

Avalanche Current

16

A

PD@TC=25℃

Total Power Dissipation4

33.7

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient (Steady State)1

62

℃

/W

RθJC

Thermal Resistance Junction-Case1

2.1

℃

/W

Số phần tương tự - AP80N04BD

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