AP75N10NF datasheet(1/7 Pages) APME

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AP75N10NF

100V N-Channel Enhancement Mode MOSFET

AP75N10NF REV1.0

永源微電子科技有限公司

Description

The AP75N10NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 10V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 100V ID =75A

RDS(ON) < 15mΩ@ VGS=10V （Type：11mΩ）

Application

Automative lighting

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP75N10NF

PDFN5X6-8L

AP75N10NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Drain Current, VGS @ 10V

75

A

ID@TC=100

℃

Drain Current, VGS @ 10V

38

A

IDM

Pulsed Drain Current1

236

A

EAS

Single Pulse Avalanche Energy

108

mJ

IAS

Avalanche Current

40

A

PD@TC=25

℃

Total Power Dissipation

146

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Maximum Thermal Resistance, Junctionambient

62.5

℃/W

RθJC

Maximum Thermal Resistance, Junction-case

1.4

℃/W

Số phần tương tự - AP75N10NF

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