AP60N03NF datasheet(1/7 Pages) APME

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AP60N03NF

30V N-Channel Enhancement Mode MOSFET

AP60N03NF RVE1.1

永源微電子科技有限公司

Description

The AP60N03NF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 30V ID =60A

RDS(ON) < 8.5mΩ @ VGS=10V （Type：6.0mΩ）

Application

BLDC

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP60N03NF

PDFN5*6-8L

AP60N03NF XXX YYYY

5000

Absolute Maximum Ratings (TC=25

℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

60

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

40

A

IDM

Pulsed Drain Current2

92

A

EAS

Single Pulse Avalanche Energy3

57.8

mJ

IAS

Avalanche Current

34

A

PD@TC=25

℃

Total Power Dissipation4

29

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

25

℃/W

RθJC

Thermal Resistance Junction-Case1

4.32

℃/W

Số phần tương tự - AP60N03NF

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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More results

Mô tả tương tự - AP60N03NF

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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