AP60N02BD datasheet(1/7 Pages) APME

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AP60N02BD

20V N-Channel Enhancement Mode MOSFET

AP60N02BD RVE1.0

永源微電子科技有限公司

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP60N02BD

TO-252-3L

AP60N02BD XXX YYYY

2500

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Max.

Units

VDSS

Drain-Source Voltage

20

V

VGSS

Gate-Source Voltage

±12

V

ID@TA=25℃

Continuous Drain Current, VGS @ 4.5V

60

A

ID@TA=70℃

Continuous Drain Current, VGS @ 4.5V

39

A

IDM

Pulsed Drain Current note1

200

A

EAS

Single Pulsed Avalanche Energy note2

47.6

mJ

PD@TA=25℃

Power Dissipation

37

W

RθJC

Thermal Resistance, Junction to Case

4

℃

/W

TJ, TSTG

Operating and Storage Temperature Range

-55 to +175

℃

Description

The AP60N02BD uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=20V ID=60A

RDS(ON) < 6.5mΩ @ VGS=4.5V （Type：4.8mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Số phần tương tự - AP60N02BD

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
A POWER MICROELECTRONIC...	AP60N02DF	1Mb / 7P	20V N-Channel Enhancement Mode MOSFET
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Mô tả tương tự - AP60N02BD

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Zetex Semiconductors	ZXMN2A01F	85Kb / 4P	20V N-CHANNEL ENHANCEMENT MODE MOSFET
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Cystech Electonics Corp...	MTN2300N3	476Kb / 5P	20V N-CHANNEL Enhancement Mode MOSFET
Diodes Incorporated	ZXM62N02E6	192Kb / 7P	20V N-CHANNEL ENHANCEMENT MODE MOSFET JUNE 2004
	ZXMN2A01F	223Kb / 7P	20V N-CHANNEL ENHANCEMENT MODE MOSFET FEBRUARY 2006
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Cystech Electonics Corp...	MTA090N02KC3	395Kb / 8P	20V N-Channel Enhancement Mode MOSFET

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Số phần tương tự - AP60N02BD

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