AP60G02NF

20V N+P-Channel Enhancement Mode MOSFET

AP60G02NF RVE1.0

永源微電子科技有限公司

P-Electrical Characteristics (TJ=25

℃, unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V,ID= -250μA

-20

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS = -20V, VGS = 0V,

-

-

-1

μA

IGSS

Gate to Body Leakage Current

VDS =0V, VGS = ±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS= VGS, ID= -250μA

-0.35

-0.65

-1.0

V

RDS(on)

Static Drain-Source on-Resistance note3

VGS =-4.5V, ID =-15A

-

6.8

8.5

mΩ

VGS =-2.5V, ID =-12A

-

8.9

10

Ciss

Input Capacitance

VDS =-10V, VGS =0V, f =

1.0MHz

-

4590

-

pF

Coss

Output Capacitance

-

505

-

pF

Crss

Reverse Transfer Capacitance

-

440

-

pF

Qg

Total Gate Charge

VDS =-10V, ID =-15A,

VGS =-4.5V

-

46

-

nC

Qgs

Gate-Source Charge

-

7.3

-

nC

Qgd

Gate-Drain(“Miller”) Charge

-

10

-

nC

td(on)

Turn-on Delay Time

VDD =-10V, ID =-14A,

RGEN=2.7Ω,

VGS =-10V

-

8

-

ns

tr

Turn-on Rise Time

-

59

-

ns

td(off)

Turn-off Delay Time

-

111

-

ns

tf

Turn-off Fall Time

-

43

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

-60

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

-240

A

VSD

Drain to Source Diode Forward Voltage

VGS = 0V, IS =-20A

-

-

-1.2

V

trr

Reverse Recovery Time

TJ=25

℃,ISD=-15A,

VGS=0V di/dt=-100A/μs

-

18

-

ns

Qrr

Reverse Recovery Charge

-

7.7

-

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、EAS condition: TJ=25℃, VDD =-16V,V GS =-4.5V ,L=0.1mH，RG=25Ω，ID=25A

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.