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M28F101 bảng dữ liệu(PDF) 6 Page - STMicroelectronics

tên linh kiện M28F101
Giải thích chi tiết về linh kiện  1 Mb 128K x 8, Chip Erase FLASH MEMORY
PDF  23 Pages
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
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background image
Symbol
Parameter
Test Condition
Min
Max
Unit
ILI
Input Leakage Current
0V
≤ VIN ≤ VCC
±1
µA
ILO
Output Leakage Current
0V
≤ VOUT ≤ VCC
±10
µA
ICC
Supply Current (Read)
E = VIL, f = 6MHz
30
mA
ICC1
Supply Current (Standby) TTL
E = VIH
1mA
Supply Current (Standby) CMOS
E = VCC
± 0.2V
50
µA
ICC2
(1)
Supply Current (Programming)
During Programming
10
mA
ICC3
(1)
Supply Current (Program Verify)
During Verify
15
mA
ICC4
(1)
Supply Current (Erase)
During Erasure
15
mA
ICC5
(1)
Supply Current (Erase Verify)
During Erase Verify
15
mA
ILPP
Program Leakage Current
VPP
≤ VCC
±10
µA
IPP
Program Current (Read or
Standby)
VPP >VCC
120
µA
VPP
≤ VCC
±10
µA
IPP1
(1)
Program Current (Programming)
VPP =VPPH, During Programming
30
mA
IPP2
(1)
Program Current (Program
Verify)
VPP =VPPH, During Verify
5
mA
IPP3
(1)
Program Current (Erase)
VPP =VPPH, During Erase
30
mA
IPP4
(1)
Program Current (Erase Verify)
VPP =VPPH, During Erase Verify
5
mA
VIL
Input Low Voltage
–0.5
0.8
V
VIH
Input High Voltage TTL
2
VCC + 0.5
V
Input High Voltage CMOS
0.7 VCC
VCC + 0.5
V
VOL
Output Low Voltage
IOL = 5.8mA (grade 1)
0.45
V
IOL = 2.1mA (grade 6)
0.45
V
VOH
Output High Voltage CMOS
IOH = –100
µA
4.1
V
IOH = –2.5mA
0.85 VCC
V
Output High Voltage TTL
IOH = –2.5mA
2.4
V
VPPL
Program Voltage (Read
Operations)
0
6.5
V
VPPH
Program Voltage (Read/Write
Operations)
11.4
12.6
V
VID
A9 Voltage (Electronic Signature)
11.5
13
V
IID
(1)
A9 Current (Electronic Signature)
A9 = VID
200
µA
VLKO
Supply Voltage, Erase/Program
Lock-out
2.5
V
Note: 1. Not 100% tested. Characterisation Data available.
Table 8. DC Characteristics
(TA = 0 to 70
°C, –40 to 85 °C or –40 to 125 °C; VCC =5V ± 10%)
6/23
M28F101



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