AP50N04DF datasheet(1/7 Pages) APME

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AP50N04DF

40V N-Channel Enhancement Mode MOSFET

AP50N04DF REV1.0

永源微電子科技有限公司

Description

The AP50N04DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 40V ID =50A

RDS(ON) < 18mΩ @ VGS=10V （Type：13mΩ）

Application

VBUS

Wireless impact

Mobile phone fast charging

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP50N04DF

PDFN3X3-8L

AP50N04DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

40

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

50

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

25

A

IDM

Pulsed Drain Current2

180

A

EAS

Single Pulse Avalanche Energy3

313

mJ

IAS

Avalanche Current

25

A

PD@TC=25℃

Total Power Dissipation4

31.3

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient

62.5

℃

/W

RθJC

Thermal Resistance Junction-Case1

3

℃

/W

Số phần tương tự - AP50N04DF

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