AP50N03BF datasheet(1/7 Pages) APME

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AP50N03BF

30V N-Channel Enhancement Mode MOSFET

AP50N03BF RVE1.0

永源微電子科技有限公司

Description

The AP50N03BF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 4.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS=30V ID =50A

RDS(ON) < 10mΩ @ VGS=10V

（Type：8.0mΩ）

Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP50N03BF

QFN2*2-6L

AP50N03BF XXXX YYYY

3000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

30

V

VGS

Gate-Source Voltage

±20

V

ID@TC=25

℃

Continuous Drain Current, VGS @ 10V1

50

A

ID@TC=100

℃

Continuous Drain Current, VGS @ 10V1

12

A

IDM

Pulsed Drain Current2

112

A

EAS

Single Pulse Avalanche Energy3

24.2

mJ

IAS

Avalanche Current

10

A

PD@TC=25

℃

Total Power Dissipation

37.5

W

TSTG

Storage Temperature Range

-55 to 175

℃

TJ

Operating Junction Temperature Range

-55 to 175

℃

RθJA

Thermal Resistance Junction-Ambient 1

125

℃/W

RθJC

Thermal Resistance Junction-Case1

4

℃/W

Số phần tương tự - AP50N03BF

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
A POWER MICROELECTRONIC...	AP50N03AD	1Mb / 7P	30V N-Channel Enhancement Mode MOSFET
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	AP50N03P	1Mb / 6P	30V N-Channel Enhancement Mode MOSFET
	AP50N03S	1Mb / 6P	30V N-Channel Enhancement Mode MOSFET

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Mô tả tương tự - AP50N03BF

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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