AP40N15FITIP

150V N-Channel Enhancement Mode MOSFET

AP40N15F/P/T RVE1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

150

---

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=20A

---

35

46

mΩ

Static Drain-Source On-Resistance2

VGS=4.5V , ID=20A

---

37

50

mΩ

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

2.0

2.5

V

IDSS

Drain-Source Leakage Current

VDS=120V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=120V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=20A

---

55

---

S

Qg

Total Gate Charge (4.5V)

VDS=75V , VGS=4.5V , ID=10A

---

40

---

nC

Qgs

Gate-Source Charge

---

10

---

Qgd

Gate-Drain Charge

---

21

---

Td(on)

Turn-On Delay Time

VDD=50V , VGS=4.5V ,

RG=3.3Ω

ID=10A

---

18

---

ns

Tr

Rise Time

---

20

---

Td(off)

Turn-Off Delay Time

---

65

---

Tf

Fall Time

---

15

---

Ciss

Input Capacitance

VDS=25V , VGS=0V , f=1MHz

---

3755

---

pF

Coss

Output Capacitance

---

207

---

Crss

Reverse Transfer Capacitance

---

160

---

IS

Continuous Source Current1,5

VG=VD=0V , Force Current

---

---

30

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25

℃

---

---

1.2

V

trr

Reverse Recovery Time

IF=10A , dI/dt=100A/µs ,

TJ=25

℃

---

35

---

nS

Qrr

Reverse Recovery Charge

---

120

---

nC

Notes:

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%

3、The EAS data shows Max. rating . The test condition is VDD=50V, VGS=10V, L=0.5mH, IAS=38A

4、The power dissipation is limited by 150°C junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.