AP40N10NF

100V N-Channel Enhancement Mode MOSFET

AP40N10NF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

BVDSS

Drain-Source Breakdown Voltage

VGS = 0V, ID = 250μA

100

108

-

V

IDSS

Drain-Source Leakage Current

VDS = 80V, VGS = 0V

-

-

1

μA

IGSS

Gate to Body Leakage Current

VDS = 0V, VGS = ±20V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS = VGS, ID = 250μA

0.9

1.2

2.6

V

RDS(on)

Static Drain-Source On-Resistance

VGS = 10V, ID = 15A

-

18

25

mΩ

VGS = 4.5V, ID = 10A

-

28

38

mΩ

gfs

Forward Threshold Voltage

VDS= 10V, ID= 20A

-

22

-

S

Rg

Gate Resistance

VDS = VGS=0V, f = 1.0MHz

-

1.62

-

Ω

Ciss

Input Capacitance

VDS = 50V, VGS = 0V, f =

1.0MHz

-

822

-

pF

Coss

Output Capacitance

-

310

-

pF

Crss

Reverse Transfer Capacitance

-

23.5

-

pF

Qg

Total Gate Charge

VDS= 50V, ID = 20A,

VGS = 10V

-

22.7

-

nC

Qgs

Gate-Source Charge

-

6.2

-

Qgd

Gate-Drain(“Miller”) Charge

-

5.3

-

td(on)

Turn-On Delay Time

VDS = 50V, ID = 20A,

RG = 3Ω, VGS=10V

-

15

-

ns

tr

Turn-On Rise Time

-

3.2

-

td(off)

Turn-Off Delay Time

-

30

-

tf

Turn-Off Fall Time

-

7.6

-

IS

Continuous Source Current

-

-

40

A

VSD

Diode Forward Voltage

IS=20A . VGS = 0V

-

0.88

1.2

V

trr

Reverse Recovery Time

ISD=20A, dlSD/dt=100A/μs

-

45

-

ns

Qrr

Reverse Recovery Charge

-

59

-

nC

Notes:

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2%

3、The EAS data shows Max. rating . The test condition is VDD=50V, VGS=10V, L=0.5mH, IAS=8A

4、The power dissipation is limited by 150°C junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.