AP30N15NF

150V N-Channel Enhancement Mode MOSFET

AP30N15NF RVE1.0

永源微電子科技有限公司

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

150

175

---

V

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=10A

---

47

56

mΩ

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

2.0

2.9

4.0

V

IDSS

Drain-Source Leakage Current

VDS=120V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=120V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=10A

---

25

---

S

Qg

Total Gate Charge

VDS=75V

VGS=10V

ID=10A

---

23

---

nC

Qgs

Gate-Source Charge

---

5.8

---

Qgd

Gate-Drain Charge

---

4.2

---

Td(on)

Turn-On Delay Time

VDD=75V , VGS=10V ,

RG=3.3Ω

ID=10A

---

16.2

---

ns

Tr

Rise Time

---

18.6

---

Td(off)

Turn-Off Delay Time

---

28.5

---

Tf

Fall Time

---

6.5

---

Ciss

Input Capacitance

VDS=75V , VGS=0V , f=1MHz

---

1190

---

pF

Coss

Output Capacitance

---

73

---

Crss

Reverse Transfer Capacitance

---

4

---

IS

Continuous Source Current1,4

VG=VD=0V , Force Current

---

---

20

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25

℃

---

---

1.2

V

trr

Reverse Recovery Time

IF=10A , dI/dt=100A/µs ,

TJ=25

℃

---

45

---

nS

Qrr

Reverse Recovery Charge

---

138

---

nC

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width

≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD=72V,VGS=10V,L=0.1mH,IAS=18A

4、The power dissipation is limited by 150

℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.