AP30N06NF

60V N-Channel Enhancement Mode MOSFET

AP30N06NF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25 ℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

BVDSS

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

60

65

---

V

△BVDSS/△TJ

BVDSS Temperature Coefficient

Reference to 25

℃ , ID=1mA

---

0.044

---

V/

℃

RDS(ON)

Static Drain-Source On-Resistance2

VGS=10V , ID=15A

---

28

36

mΩ

VGS=4.5V , ID=7A

---

38

45

mΩ

VGS(th)

Gate Threshold Voltage

VGS=VDS , ID =250uA

1.2

1.6

2.5

V

△VGS(th)

VGS(th) Temperature Coefficient

---

-4.8

---

mV/

℃

IDSS

Drain-Source Leakage Current

VDS=48V , VGS=0V , TJ=25

℃

---

---

1

uA

VDS=48V , VGS=0V , TJ=55

℃

---

---

5

IGSS

Gate-Source Leakage Current

VGS=±20V , VDS=0V

---

---

±100

nA

gfs

Forward Transconductance

VDS=5V , ID=15A

---

25.3

---

S

Rg

Gate Resistance

VDS=0V , VGS=0V , f=1MHz

---

2.5

---

Ω

Qg

Total Gate Charge (10V)

VDS=48V , VGS=10V , ID=15A

---

19

---

nC

Qgs

Gate-Source Charge

---

2.5

---

Qgd

Gate-Drain Charge

---

5

---

Td(on)

Turn-On Delay Time

VDD=30V , VGS=10V , RG=3.3Ω

ID=15A

---

2.8

---

ns

Tr

Rise Time

---

16.6

---

Td(off)

Turn-Off Delay Time

---

21.2

---

Tf

Fall Time

---

5.6

---

Ciss

Input Capacitance

VDS=15V , VGS=0V , f=1MHz

---

1027

---

pF

Coss

Output Capacitance

---

65

---

Crss

Reverse Transfer Capacitance

---

46

---

IS

Continuous Source Current1,6

VG=VD=0V , Force Current

---

---

20

A

ISM

Pulsed Source Current2,6

---

---

40

A

VSD

Diode Forward Voltage2

VGS=0V , IS=1A , TJ=25

℃

---

---

1.2

V

trr

Reverse Recovery Time

IF=15A , dI/dt=100A/µs ,

TJ=25

℃

---

12.2

---

nS

Qrr

Reverse Recovery Charge

---

7.3

---

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width .The EAS data shows Max. rating .

3、The test cond≦ 300us

duty cycle ≦ 2%, duty cycle ition is TJ =25℃, VDD =48V, VG =10V, RG =25Ω, L=0.1mH, IAS =13A

4、The power dissipation is limited by 175℃ junction temperature

5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.