AP30N02DF datasheet(1/7 Pages) APME

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AP30N02DF

20V N-Channel Enhancement Mode MOSFET

AP30N02DF RVE1.0

永源微電子科技有限公司

Description

The AP30N02DF uses advanced trench technology

to provide excellent RDS(ON), low gate charge and

operation with gate voltages as low as 2.5V. This

device is suitable for use as a Battery protection

or in other Switching application.

General Features

VDS = 20V ID =30A

RDS(ON) < 15mΩ @ VGS=4.5V (Type：11mΩ)

Application

solar road lights

Load switch

3.3V MCU

Package Marking and Ordering Information

Product ID

Pack

Marking

Qty(PCS)

AP30N02DF

PDFN3X3-8L

AP30N02DF XXX YYYY

5000

Absolute Maximum Ratings (TC=25℃unless otherwise noted)

Symbol

Parameter

Rating

Units

VDS

Drain-Source Voltage

20

V

VGS

Gate-Source Voltage

±

20

V

ID@TC=25℃

Continuous Drain Current, VGS @ 10V1

30

A

ID@TC=100℃

Continuous Drain Current, VGS @ 10V1

13

A

IDM

Pulsed Drain Current2

50

A

EAS

Single Pulse Avalanche Energy3

8.1

mJ

IAS

Avalanche Current

12.7

A

PD@TC=25℃

Total Power Dissipation4

20.8

W

TSTG

Storage Temperature Range

-55 to 150

℃

TJ

Operating Junction Temperature Range

-55 to 150

℃

RθJA

Thermal Resistance Junction-ambient 1

62

℃

/W

RθJC

Thermal Resistance Junction-Case1

6

℃

/W

Số phần tương tự - AP30N02DF

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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