AP30N02BF

20V N-Channel Enhancement Mode MOSFET

AP30N02BF REV1.0

永源微電子科技有限公司

Electrical Characteristics (TJ=25℃, unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-Source Breakdown Voltage

ID = 250mA, VGS=0V

20

-

-

V

IDSS

Zero Gate Voltage Drain Current

VDS=20V, VGS=0V

-

-

1.0

mA

IGSS

Gate-Body Leakage Current

VDS=0V, VGS=±12V

-

-

±100

nA

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=250mA

0.5

0.75

1.0

V

RDS(ON)

Static Drain-Source ON-Resistance(4)

VGS=4.5V, ID=6A

-

7.8

8.5

mΩ

VGS=2.5V, ID=3A

-

10

13

mΩ

Ciss

Input Capacitance

VGS=0V, VDS=10V,

f = 1MHz

-

1195

-

pF

Coss

Output Capacitance

-

175

-

pF

Crss

Reverse Transfer Capacitance

-

150

-

pF

Qg

Total Gate Charge

VGS=0 to 4.5V VDD=10V,

ID=15A

-

13

-

nC

Qgs

Gate Source Charge

-

2.5

-

nC

Qgd

Gate Drain("Miller") Charge

-

3.5

-

nC

td(on)

Turn-On DelayTime

VGS = 4.5V, VDD =10V

ID= 15A, RGEN =3Ω

-

8

-

ns

tr

Turn-On Rise Time

-

19

-

ns

td(off)

Turn-Off DelayTime

-

30

-

ns

tf

Turn-Off Fall Time

-

11

-

ns

IS

Maximum Continuous Drain to Source Diode Forward Current

-

-

30

A

ISM

Maximum Pulsed Drain to Source Diode Forward Current

-

-

120

A

VSD

Drain to Source Diode Forward Voltage

VGS=0V, IS=30A

-

-

1.2

V

trr

Body Diode Reverse Recovery Time

IF=15A, di/dt=100A/us

-

7.5

-

ns

Qrr

Body Diode Reverse Recovery Charge

-

1.5

-

nC

Note :

1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The power dissipation is limited by 150℃ junction temperature

4、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.