AP20P06S

-60V P-Channel Enhancement Mode MOSFET

AP20P06S REV 1.0

永源微電子科技有限公司

Electrical Characteristics (TC=25℃unless otherwise noted)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-Source Breakdown Voltage

VGS=0V, ID=-250μA

-60

-68

V

VGS(th)

Gate Threshold Voltage

VDS=VGS, ID=-250μA

-1.2

-1.8

-2.5

V

IGSS

Gate Leakage Current

VDS=0V, VGS=±20V

±100

nA

IDSS

Zero Gate Voltage Drain Current

VDS=-60V, VGS=0V

-1

μA

RDS(ON)

Drain-Source On-State Resistancea

VGS=-10V, ID= -20A

13

18

mΩ

VGS=-4.5V, ID= -10A

17

20

VSD

Diode Forward Voltage

IS=-17A, VGS=0V

-0.9

-1.2

V

Qg

Total Gate Charge(10V)

VDS=-30V, VGS=-10V, ID=-50A

94

nC

Qg

Total Gate Charge(4.5V)

VDS=-30V, VGS=-4.5V, ID=-50A

46

Qgs

Gate-Source Charge

18

Qgd

Gate-Drain Charge

24

Ciss

Input capacitance

VDS=-15V, VGS=0V, F=1MHz

4707

pF

Coss

Output Capacitance

373

Crss

Reverse Transfer Capacitance

336

td(on)

Turn-On Delay Time

VDS=-30V, RL =30Ω

VGEN=-10V, RG=6Ω

53

ns

tr

Turn-On Rise Time

19

td(off)

Turn-Off Delay Time

221

tf

Turn-Off Fall Time

61

Note :

1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper.

2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%

3、The EAS data shows Max. rating . The test condition is VDD =-48V,VGS =-10V,L=0.1mH,IAS =-8A

4、The power dissipation is limited by 150℃ junction temperature

5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation.